sensitron semiconductor ?2013 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 - 4681 phone (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com SRADM1001 technical data data sheet 5392, preliminary.1 hermetic rad hard power n - channel mosfet array features: ? six individual 250 volt, 0.1 6 ohm, 12 .4 a rad hard mosfet s (1) ? single event effect (see) hardened, let 55, range: 90 m o v gs = - 15v, v ds = 250v o v gs = - 20 v, v ds = 16 0v ? single event effect (see) hardened, let 85, range: 118 m o v gs = - 10v, v ds = 250v o v gs = - 15 v, v ds = 12 0v ? total ionization dose (tid) hardened, 100krad (level r) ? fast switching ? low r ds (on) maximum ratings all ratings are a t t c = 25 ? c unless otherwise specified. rating symbol min. typ. max. units gate to source voltage v gs - - ? 20 volts on - state drain current i d - - 12.4 amps pulsed drain current (limited by t jmax ) i dm - - 50 amps operating and storage temperature t op /t stg - 55 - +150 ? c total device dissipation p d - - tbd watts thermal resistance, junction to case r thjc - - tbd ? c/w avalance energy e as - - 6 0 mj electrical characteristics characteristic symbol min. typ. max. units drain to source breakdown voltag e v gs = 0v, i d = 250 ? a bv dss 250 - - volts static drain to source on state resistance v gs = 10v, i d = 8 a r ds(on) - - 0.16 ? gate threshold voltage v ds v gs , i d = 1m a v gs(th) 2.0 - 4.0 volts zero gate voltage drain current v ds = 200v , v gs = 0v i dss - - 2 5 ? a gate to source leakage forward v gs = 20v gate to source leakage reverse v gs = - 20v i gss - - - - 100 - 100 na turn on delay time v dd = 125v rise time i d = 8 a , turn off delay time r g = 4.7 ? fall time t d(on) t r t d(off) t f - - - - 25 25 30 20 - - - - nsec diod e forward voltage i s = 12 .4a v gs = 0v v sd - - 1.25 volts reverse recovery time v dd = 125v i f = 12 .4a t rr - - 400 nsec input capacitance v gs = 0 v output capacitance v ds = 100 v reverse transfer capacitance f = 1.0mhz c iss c oss - - - 1300 90 1900 150 pf **note: this product is subject to the international traffic in arms regulations (itar), 22 c.f.r. parts 120 - 130, and may not be exported without the appropriate u.s. department of state authorization.
sensitron semiconductor ?2013 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 - 4681 phone (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com SRADM1001 technical data data sheet 5392 , preliminary.1 schematic mechanical dimensions: in inches / m m 22 - lead flatpack .625 .010 1.00 ref .625 .010 c c .500 .005 .050 typ .015 typ r .010 typ .060 .005 typ .122 .010 typ 0.010 .002 .125 max .05 ref 1 11 12 22 1 d1 2 s1 3 g1 4 n/c 5 8 9 6 7 10 11 15 n/c 14 12 13 s4 d4 g4 19 18 16 17 22 20 21 pinout pinout n/c d2 s2 g2 s3 g3 d3 n/c g5 s5 d5 d6 s6 g6
sensitron semiconductor ?2013 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 - 4681 phone (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com SRADM1001 technical data data sheet 5392, preliminary.1 disclaimer: 1 - the information given herein, including the specifications and dimensions, is subject to change without prior notice to impro ve product characteristics. before ordering, purchasers are advised to cont act the sensitron semiconductor sales department for the latest version of the datasheet(s). 2 - in cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail - safe precautions or other arrangement . 3 - in no event shall sensitron semiconductor be liable for any damages that may resul t from an accident or any other cause during operation of the users units according to the datasheet(s). sensitron semiconductor assumes no responsibility for any intellectual proper ty claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4 - in no event shall sensitron semiconductor be liable for any failure in a semiconductor device or any secondary damage resulti ng from use at a value exceeding the absolute maximum rating. 5 - no license is granted by the datasheet(s) under any patents or other rights of any third party or sensitron semiconductor. 6 - the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of sensitron semiconductor. 7 - the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applicat ion will hinder maintenance of international peace and safety nor are they to be applied to that pu rpose by their direct purchasers or any third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulat ions.
|
